IRFP450: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-to-Source Voltage	V_DS	-	-	500	V
Gate-to-Source Voltage	V_GS	-15	-	20	V
Continuous Drain Current	I_D	-	8	-	A	T_C = 25掳C
Pulse Drain Current	I_D(p)	-	16	-	A	t_p = 10 ms, T_C = 25掳C
Total Power Dissipation	P_T	-	-	110	W	T_C = 25掳C
Junction Temperature	T_J	-	-	150	掳C
Storage Temperature Range	T_stg	-55	-	150	掳C
Thermal Resistance (J-C)	R_胃JC	-	0.75	-	掳C/W
Input Capacitance	C_iss	-	1500	-	pF	V_DS = 0 V, f = 1 MHz
Output Capacitance	C_oss	-	400	-	pF	V_DS = 250 V, f = 1 MHz
Reverse Transfer Capacitance	C_rss	-	300	-	pF	V_DS = 250 V, f = 1 MHz
On-State Resistance	R_DS(on)	-	0.95	-	惟	V_GS = 10 V, I_D = 8 A
Gate Charge	Q_G	-	50	-	nC	V_DS = 400 V, V_GS = 15 V

Mounting and Heat Sinking:
- Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Use a thermal compound to improve thermal conductivity between the device and the heat sink.
Biasing:
- Apply a gate-to-source voltage (V_GS) within the specified range to turn the device on or off.
- For reliable operation, ensure V_GS is at least 10 V to fully enhance the device.
Current Handling:
- Do not exceed the continuous drain current (I_D) rating.
- For pulse applications, ensure the pulse duration (t_p) does not exceed 10 ms to avoid overheating.
Voltage Ratings:
- Do not exceed the maximum drain-to-source voltage (V_DS) or gate-to-source voltage (V_GS).
- Ensure the device is properly protected against overvoltage conditions.
Thermal Management:
- Monitor the junction temperature (T_J) to prevent thermal runaway.
- Use appropriate cooling methods such as forced air cooling or liquid cooling if necessary.
Storage:
- Store the device in a dry, cool environment within the storage temperature range (T_stg).
Handling:
- Handle the device with care to avoid mechanical damage.
- Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

(For reference only)