2SD2560-Y: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CES	-	-	600	V	IC = 0A, Tc = 25掳C
Emitter-Base Voltage	V EBO	-	-	7	V	IE = 0A, Tc = 25掳C
Collector Current	IC	-	-	15	A	Tc = 25掳C
Continuous Collector Current	I CM	-	-	8	A	Tc = 25掳C
Power Dissipation	Ptot	-	-	125	W	Tc = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Mounting and Handling:
- Ensure proper heat sinking to manage the power dissipation especially when operating at high currents.
- Handle with care to avoid damage to the pins or the body of the transistor.
Biasing and Operation:
- Operate within specified voltage and current limits to prevent damage.
- For optimal performance, keep the junction temperature within the specified range.
Storage:
- Store in a dry place within the specified storage temperature range to avoid degradation.
Testing:
- When testing, ensure that all parameters are within the maximum ratings to avoid damaging the device.
- Use appropriate test equipment to measure parameters accurately.
Soldering:
- Follow recommended soldering profiles to avoid thermal shock which can damage the device.
- Allow sufficient cooling time post-soldering before operation.

(For reference only)