FDN360P: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Drain-Source Voltage	V_DS		-30		0	V
Gate-Source Voltage	V_GS		-20		0	V
Continuous Drain Current	I_D	V_DS = -30V, T_A = 25掳C		150		mA
Gate Leakage Current	I_GSS	V_GS = 卤20V, T_A = 25掳C			100	nA
Drain-Source On-State Resistance	R_DS(on)	V_GS = -4.5V, I_D = -150mA, T_A = 25掳C		5.5		惟
Gate-Threshold Voltage	V_GS(th)	I_D = -1mA, T_A = 25掳C	-4.0	-2.0	-1.0	V
Total Power Dissipation	P_TOT	T_C = 25掳C			350	mW
Junction Temperature	T_J				150	掳C
Storage Temperature Range	T_STG		-65		150	掳C

Handling Precautions:
- The FDN360P is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling and installation.
- Avoid exposing the device to temperatures outside its specified operating range.
Mounting:
- Ensure that the device is mounted on a suitable heat sink if it will be operated at high power levels.
- Follow recommended soldering profiles to avoid thermal damage during assembly.
Biasing:
- Apply the gate-source voltage (V_GS) within the specified limits to prevent damage to the device.
- Ensure that the drain-source voltage (V_DS) does not exceed the maximum rating.
Operation:
- Monitor the drain current (I_D) to ensure it remains within the continuous drain current limit.
- Check the junction temperature (T_J) to ensure it does not exceed the maximum allowable value.
Testing:
- Use the test conditions provided in the parameter table to verify the performance of the device.
- Measure the gate leakage current (I_GSS) and drain-source on-state resistance (R_DS(on)) to ensure they meet the specified values.
Storage:
- Store the device in a dry, cool environment within the storage temperature range to maintain its reliability.
Applications:
- The FDN360P is suitable for applications such as signal switching, load driving, and low-side switching in consumer electronics, automotive, and industrial systems.

(For reference only)