2SK2312: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Value	Unit
Drain-Source Voltage (Max)	Vds(max)	500	V
Gate-Source Voltage (Max)	Vgs(max)	卤20	V
Continuous Drain Current (Tc=25掳C)	Id	20	A
Continuous Drain Current (Tc=100掳C)	Id	15	A
Pulse Drain Current (Tc=25掳C, t=10ms)	Idp	40	A
Transconductance (Min)	Gfs(min)	12	S
Input Capacitance	Ciss	2700	pF
Output Capacitance	Coss	250	pF
Reverse Transfer Capacitance	Crss	300	pF
Gate Threshold Voltage	Vth	2 to 4	V
Total Power Dissipation (Tc=25掳C)	Ptot	200	W
Total Power Dissipation (Tc=100掳C)	Ptot	150	W
Junction Temperature (Max)	Tj(max)	175	掳C
Storage Temperature Range	Tstg	-55 to 175	掳C

Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified range.
- Use a thermal compound between the transistor and the heatsink to improve thermal conductivity.
Biasing:
- Apply the gate-source voltage (Vgs) carefully to avoid exceeding the maximum ratings.
- Ensure that the gate is properly decoupled to prevent oscillations.
Operation:
- Operate the device within the continuous drain current limits for reliable performance.
- For pulse applications, ensure that the pulse duration and frequency do not exceed the specified pulse drain current limits.
Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Handle with care to avoid mechanical stress or damage to the leads.
Testing:
- Use appropriate test equipment and procedures to avoid damaging the device during testing.
- Verify all connections and settings before applying power.
Safety:
- Always follow standard safety practices when handling high-voltage and high-current circuits.
- Use protective equipment as necessary.

(For reference only)