IXTQ69N30P 69A 300V TO-3P

IXTQ69N30P 69A 300V TO-3P

Category: Available (Qty:9999999)
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Description

BUY IXTQ69N30P 69A 300V TO-3P https://www.utsource.net/itm/p/11724652.html

Parameter Value Unit
Maximum Drain Current (IDM) 69 A
Maximum Drain-Source Voltage (VDS) 300 V
Maximum Gate-Source Voltage (VGS) 卤20 V
Continuous Drain Current (ID) at 25掳C 41.4 A
Continuous Drain Current (ID) at 100掳C 27.6 A
Power Dissipation (PD) at 25掳C 180 W
Power Dissipation (PD) at 100掳C 120 W
Junction Temperature (TJ) -55 to 150 掳C
Storage Temperature (TSTG) -55 to 150 掳C
Package Type TO-3P -

Instructions for Use:

  1. Mounting: Ensure the TO-3P package is mounted with appropriate heat sinking to manage thermal resistance and maintain operational temperature within specified limits.
  2. Voltage Handling: Do not exceed the maximum drain-source voltage (VDS) of 300V to prevent device damage.
  3. Current Limits: Operate within the continuous drain current (ID) limits, especially considering the ambient temperature effects on current ratings.
  4. Gate Drive: Apply gate voltages within the 卤20V limit to avoid damaging the gate oxide.
  5. Power Dissipation: Keep power dissipation within rated values by ensuring adequate cooling or reducing load conditions if necessary.
  6. Temperature Management: Monitor junction temperature (TJ) to ensure it remains between -55掳C and 150掳C for reliable operation.
  7. Storage Conditions: Store the device in an environment where temperatures range from -55掳C to 150掳C to maintain its integrity.
  8. Handling Precautions: Handle with care to avoid electrostatic discharge (ESD) which can damage the semiconductor components.
(For reference only)

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