The IRF630, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company's consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.
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Drain to source voltage (Vds) is 200V
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Gate to source voltage of ±20V
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Continuous drain current (Id) is 9A
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Power dissipation (Pd) is 75W
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Operating junction temperature range from -65°C to 150°C
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Gate threshold voltage of 3V
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Low on state resistance of 350mohm at Vgs 10V
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Malaysia
