4.0A, 1200V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=2.0A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Singapore
