Description
BUY 2SC2059K https://www.utsource.net/itm/p/12597197.html
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Collector-Emitter Voltage |
VCEO |
- |
- |
600 |
V |
Collector-Base Voltage |
VCBO |
- |
- |
700 |
V |
Emitter-Base Voltage |
VEBO |
- |
- |
7 |
V |
Collector Current |
IC |
- |
- |
15 |
A |
Base Current |
IB |
- |
- |
3 |
A |
Power Dissipation |
PT |
- |
- |
180 |
W |
Junction Temperature |
TJ |
-20 |
- |
150 |
掳C |
Storage Temperature |
TSTG |
-55 |
- |
150 |
掳C |
Instructions for Use:
Handling:
- Handle the 2SC2059K with care to avoid mechanical damage.
- Use proper ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
Mounting:
- Ensure proper heat sinking to manage the high power dissipation capability.
- Use thermal paste between the transistor and the heat sink for better thermal conductivity.
Biasing:
- Ensure that the base current (IB) is sufficient to fully turn on the transistor, but do not exceed the maximum base current rating.
- Use a suitable base resistor to limit the base current.
Operating Conditions:
- Do not exceed the maximum ratings for collector-emitter voltage (VCEO), collector-base voltage (VCBO), and emitter-base voltage (VEBO).
- Keep the junction temperature (TJ) within the specified range to ensure reliable operation.
Storage:
- Store the 2SC2059K in a dry, cool place to prevent moisture damage.
- Avoid exposing the device to extreme temperatures outside the storage temperature range.
Testing:
- Use a multimeter or transistor tester to verify the functionality of the 2SC2059K before installation.
- Perform initial testing at low power levels to ensure proper operation.
Soldering:
- Use a soldering iron with a temperature setting appropriate for semiconductor devices.
- Avoid overheating the leads during soldering to prevent damage to the internal structure of the transistor.
(For reference only)
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