FDS4559(5pcs)
FDS4559(5pcs)

 

FDS4559(5pcs)

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Category: Available (Qty:9999999)
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Description

BUY FDS4559(5pcs) https://www.utsource.net/itm/p/12596506.html

Parameter Description
Part Number FDS4559
Quantity 5 pcs
Type N-Channel Enhancement Mode MOSFET
Package Type TO-252 (DPAK)
Vds (Drain-Source Voltage) ±60V
Vgs (Gate-Source Voltage) ±20V
Rds(on) (On-Resistance) 120 mΩ (Typical @ Vgs = 10V, Id = 1.7A)
Id (Continuous Drain Current) 3.8A (Ta=25°C), 2.2A (Tc=25°C)
Power Dissipation (Pd) 1.2W (Ta=25°C), 2.1W (Tc=25°C)
Operating Temperature Range -55°C to +150°C
Storage Temperature Range -65°C to +150°C

Instructions for Use:

  1. Handling Precautions: The FDS4559 is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
  2. Mounting: Ensure that the component is securely mounted on a suitable heatsink if operating at high current or power levels to maintain optimal temperature performance.
  3. Biasing: Apply gate-source voltage within the specified range to avoid damage to the device. Typical operation uses a Vgs of 10V for full enhancement.
  4. Testing: Before final assembly, it is recommended to test the MOSFET in a controlled environment to ensure it meets the required specifications.
  5. Soldering: Follow standard soldering practices for surface mount devices. Avoid excessive heat during soldering to prevent thermal damage.

For detailed application notes and further technical information, refer to the manufacturer’s datasheet.

(For reference only)

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