IXTK82N25P

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Instructions for Use:

1. Mounting and Handling:

   • Ensure that the device is handled with care to avoid mechanical stress.
   • Use appropriate thermal management techniques to ensure the junction temperature does not exceed 175掳C.

2. Electrical Connections:

   • Connect the gate (G), drain (D), and source (S) terminals correctly.
   • Ensure that the gate-source voltage (V_GS) does not exceed 卤15V to prevent damage to the gate oxide.

3. Operating Conditions:

   • Do not exceed the maximum collector-emitter voltage (V_CE(off)) of 2500V.
   • The continuous drain current (I_D(on)) should not exceed 82A at 25掳C junction temperature.
   • For pulse operations, the peak drain current (I_D(peak)) can be up to 330A for 10渭s pulses at 25掳C junction temperature.

4. Thermal Management:

   • Use a heatsink or other cooling methods to manage the power dissipation (P_TOT) of up to 3000W.
   • Monitor the case temperature (T_C) to ensure it remains within safe limits.

5. Storage:

   • Store the device in a dry environment with temperatures between -55掳C and 150掳C.
   • Avoid exposure to high humidity and corrosive environments.

6. Testing and Diagnostics:

   • Regularly check the device parameters to ensure they remain within specified limits.
   • Use appropriate test equipment to verify the functionality of the device.

7. Safety Precautions:

   • Always follow proper safety procedures when handling high-voltage and high-power devices.
   • Ensure that the device is properly insulated and grounded to prevent electrical shock.