Description
BUY 2SD2560-Y https://www.utsource.net/itm/p/12534987.html
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Conditions |
Collector-Emitter Voltage |
V CES |
- |
- |
600 |
V |
IC = 0A, Tc = 25°C |
Emitter-Base Voltage |
V EBO |
- |
- |
7 |
V |
IE = 0A, Tc = 25°C |
Collector Current |
IC |
- |
- |
15 |
A |
Tc = 25°C |
Continuous Collector Current |
I CM |
- |
- |
8 |
A |
Tc = 25°C |
Power Dissipation |
Ptot |
- |
- |
125 |
W |
Tc = 25°C |
Junction Temperature |
TJ |
- |
- |
150 |
°C |
|
Storage Temperature |
TSTG |
-55 |
- |
150 |
°C |
|
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to manage the power dissipation especially when operating at high currents.
- Handle with care to avoid damage to the pins or the body of the transistor.
Biasing and Operation:
- Operate within specified voltage and current limits to prevent damage.
- For optimal performance, keep the junction temperature within the specified range.
Storage:
- Store in a dry place within the specified storage temperature range to avoid degradation.
Testing:
- When testing, ensure that all parameters are within the maximum ratings to avoid damaging the device.
- Use appropriate test equipment to measure parameters accurately.
Soldering:
- Follow recommended soldering profiles to avoid thermal shock which can damage the device.
- Allow sufficient cooling time post-soldering before operation.
(For reference only)
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