2SD2560-Y

2SD2560-Y

Category: Available (Qty:9999999)
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Description

BUY 2SD2560-Y https://www.utsource.net/itm/p/12534987.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage V CES - - 600 V IC = 0A, Tc = 25°C
Emitter-Base Voltage V EBO - - 7 V IE = 0A, Tc = 25°C
Collector Current IC - - 15 A Tc = 25°C
Continuous Collector Current I CM - - 8 A Tc = 25°C
Power Dissipation Ptot - - 125 W Tc = 25°C
Junction Temperature TJ - - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage the power dissipation especially when operating at high currents.
    • Handle with care to avoid damage to the pins or the body of the transistor.
  2. Biasing and Operation:

    • Operate within specified voltage and current limits to prevent damage.
    • For optimal performance, keep the junction temperature within the specified range.
  3. Storage:

    • Store in a dry place within the specified storage temperature range to avoid degradation.
  4. Testing:

    • When testing, ensure that all parameters are within the maximum ratings to avoid damaging the device.
    • Use appropriate test equipment to measure parameters accurately.
  5. Soldering:

    • Follow recommended soldering profiles to avoid thermal shock which can damage the device.
    • Allow sufficient cooling time post-soldering before operation.
(For reference only)

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