FGH60N60SFD FGH60N60 60N60 TO-247: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Below is the parameter table and instructions for the FGH60N60SFD (FGH60N60) 60N60 TO-247 N-Channel MOSFET.

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Drain-Source Voltage	V_DS	-	-	600	V	-
Gate-Source Voltage	V_GS	-15	-	20	V	-
Continuous Drain Current	I_D	-	60	-	A	T_C = 25掳C
Continuous Drain Current	I_D	-	38	-	A	T_C = 100掳C
Pulse Drain Current	I_D(p)	-	120	-	A	t_p = 10 ms, T_C = 25掳C
Total Power Dissipation	P_TOT	-	-	190	W	T_C = 25掳C
Junction Temperature	T_J	-	-	175	掳C	-
Storage Temperature Range	T_STG	-55	-	150	掳C	-
Gate Charge	Q_G	-	110	-	nC	V_GS = 10V, I_D = 10A
Input Capacitance	C_iss	-	3800	-	pF	V_DS = 300V, f = 1 MHz
Output Capacitance	C_oss	-	240	-	pF	V_DS = 300V, f = 1 MHz
Reverse Transfer Capacitance	C_rss	-	100	-	pF	V_DS = 300V, f = 1 MHz
On-State Resistance	R_DS(on)	-	0.18	-	惟	V_GS = 10V, I_D = 20A, T_J = 25掳C
Threshold Voltage	V_GS(th)	2.0	3.0	4.0	V	I_D = 250 渭A, T_A = 25掳C
Maximum Gate-Source Voltage	V_GS(max)	-15	-	20	V	-

Handling and Storage:
- Handle the device with care to avoid damage to the leads and the body.
- Store the device in a dry, cool place away from direct sunlight and corrosive substances.
- Ensure that the storage temperature range is between -55掳C and 150掳C.
Mounting:
- Use a heat sink to manage the thermal dissipation effectively, especially when operating at high currents or power levels.
- Ensure proper mechanical alignment and secure mounting to prevent mechanical stress on the device.
- Apply thermal compound between the device and the heat sink to enhance thermal conductivity.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly to the circuit.
- Use short and thick wires to minimize parasitic inductance and resistance.
- Ensure that the gate drive voltage is within the specified range (-15V to +20V).
Operation:
- Operate the device within the specified temperature range to avoid thermal runaway and ensure reliable performance.
- Monitor the junction temperature (T_J) to ensure it does not exceed 175掳C.
- Use appropriate gate drive circuits to switch the MOSFET efficiently and avoid excessive switching losses.
Testing:
- Test the device under controlled conditions to verify its performance parameters.
- Use a suitable test setup to measure parameters such as on-state resistance, threshold voltage, and gate charge.

By following these instructions, you can ensure the optimal performance and longevity of the FGH60N60SFD MOSFET.

(For reference only)