IKW50N65H5: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES	-		650	V	Maximum voltage between collector and emitter
Collector Current	I C	-		50	A	Continuous collector current
Power Dissipation	P TOT	-		140	W	Total power dissipation
Junction Temperature	T J	-20		175	掳C	Operating junction temperature
Storage Temperature	T STG	-55		150	掳C	Storage temperature range
Gate-Emitter Voltage	V GES	-15		20	V	Maximum gate-emitter voltage
Turn-On Time	t on	-	30	80	ns	Time for transistor to turn on
Turn-Off Time	t off	-	60	120	ns	Time for transistor to turn off
Gate Charge	Q g	-	130	180	nC	Total gate charge
Thermal Resistance	R 胃JC	-	1.1	-	掳C/W	Junction to case thermal resistance

Handling Precautions:
- Avoid exceeding the maximum ratings specified in the table.
- Use appropriate heat sinks to manage power dissipation and maintain junction temperature within safe limits.
Mounting:
- Ensure proper mechanical and electrical connections to the PCB or heatsink.
- Apply thermal paste between the device and the heatsink to enhance thermal conductivity.
Driving the Gate:
- Apply the correct gate-emitter voltage (VGES) to ensure reliable switching.
- Use a driver circuit to provide sufficient current to charge and discharge the gate quickly, reducing switching losses.
Operating Conditions:
- Operate within the specified junction temperature range to avoid thermal damage.
- Store the device in a dry, cool environment to prevent moisture damage.
Testing:
- Perform initial testing at low power levels to verify proper operation.
- Monitor temperature and current during operation to ensure safe and efficient performance.
Safety:
- Follow all safety guidelines and regulations when handling high-voltage and high-current circuits.
- Use protective equipment such as gloves and goggles when necessary.

(For reference only)