IRF840

BUY IRF840 https://www.utsource.net/itm/p/12520634.html

Instructions for Use:

1. Operating Conditions:

   • Ensure that the drain-source voltage (V_DS) does not exceed 500V.
   • The gate-source voltage (V_GS) should be kept within the range of -20V to +20V.
   • Continuous drain current (I_D) should not exceed 8A at a case temperature of 25掳C.
   • Pulse drain current (I_Dpeak) can reach up to 16A for short durations (10 渭s) at a case temperature of 25掳C.

2. Thermal Management:

   • The power dissipation (P_TOT) should not exceed 79W at a case temperature of 25掳C.
   • The junction temperature (T_J) should be kept below 150掳C.
   • Use appropriate heat sinks to manage thermal resistance and ensure proper cooling.

3. Storage and Handling:

   • Store the device in a dry environment with temperatures between -55掳C and 150掳C.
   • Handle the device with care to avoid damage to the pins and internal components.

4. Electrical Characteristics:

   • Monitor the input capacitance (C_iss), output capacitance (C_oss), and reverse transfer capacitance (C_rss) to ensure stable operation.
   • The gate charge (Q_G) affects switching performance; ensure it is within the specified range for optimal operation.

5. Switching Performance:

   • The turn-on delay time (t_d(on)), rise time (t_r), turn-off delay time (t_d(off)), and fall time (t_f) are critical for high-frequency applications. Ensure these parameters meet the requirements of your circuit design.

6. Mounting and Soldering:

   • Follow recommended soldering profiles to avoid thermal shock and mechanical stress.
   • Ensure proper alignment and secure mounting to prevent mechanical failure.

7. Testing and Verification:

   • Test the device under controlled conditions to verify its performance and reliability.
   • Use appropriate test equipment and procedures to measure key parameters and ensure they meet the specified values.