Description
BUY RS18N50F https://www.utsource.net/itm/p/12511187.html
| Parameter |
Description |
Value |
| Part Number |
Component Identifier |
RS18N50F |
| Type |
Device Type |
N-Channel MOSFET |
| VDS (V) |
Drain-Source Voltage |
50V |
| RDS(on) (惟) |
On-State Resistance at VGS=10V |
18m惟 |
| ID (A) |
Continuous Drain Current |
42A |
| PD (W) |
Power Dissipation |
1.6W |
| Package |
Housing Type |
TO-220 |
| VGS(th) (V) |
Gate Threshold Voltage |
2.1V to 4.0V |
| Qg (nC) |
Total Gate Charge |
39nC |
| FBSOA |
Forward Bias Safe Operating Area |
Refer to Datasheet |
| Operating Temp |
Junction Temperature Range |
-55掳C to 150掳C |
Instructions for Use:
- Installation: Ensure the RS18N50F is mounted on a suitable heatsink if operating near maximum current or power ratings to prevent overheating.
- Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
- Gate Drive: For optimal performance, ensure the gate voltage does not exceed the maximum rating and use adequate drive strength to switch the MOSFET quickly.
- Thermal Management: Monitor the junction temperature to stay within the specified operating range. Use thermal management techniques like heatsinks or forced air cooling as necessary.
- Storage: Store in a dry environment away from direct sunlight and extreme temperatures.
- Refer to Datasheet: Always consult the full datasheet for detailed specifications, especially for parameters like the forward bias safe operating area (FBSOA) which are critical for specific applications.
(For reference only)
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