AOD5B65MQ1E
AOD5B65MQ1E

 

AOD5B65MQ1E

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Category: Available (Qty:9999999)
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Description

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Below is the parameter table and instructions for the AOD5B65MQ1E MOSFET:

Parameter Table

Parameter Symbol Min Typ Max Unit Test Conditions
Drain-Source Voltage VDS - 650 - V -
Gate-Source Voltage VGS -20 - 20 V -
Continuous Drain Current ID - - 33 A TC = 25掳C
Continuous Drain Current (Pulsed) ID(pulsed) - - 48 A TC = 25掳C, tp = 10 渭s
Power Dissipation PD - - 175 W TC = 25掳C
Junction Temperature TJ - - 175 掳C -
Storage Temperature Range TSTG -55 - 150 掳C -
Input Capacitance Ciss - 2300 - pF VDS = 300 V, f = 1 MHz
Output Capacitance Coss - 190 - pF VDS = 300 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 350 - pF VDS = 300 V, f = 1 MHz
Gate Charge QG - 110 - nC VDS = 300 V, VGS = 10 V
Threshold Voltage VGS(th) 2.0 3.0 4.0 V ID = 250 渭A
On-State Resistance RDS(on) - 0.075 - 惟 VGS = 10 V, ID = 33 A
Total Gate Charge QG - 110 - nC VDS = 300 V, VGS = 10 V

Instructions

  1. Handling and Storage:

    • Store the device in a dry, cool place to avoid moisture damage.
    • Handle the device with care to avoid mechanical stress or damage to the leads.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.

  2. Mounting:

    • Ensure that the mounting surface is clean and free from contaminants.
    • Use a thermal interface material (TIM) between the device and the heat sink to improve thermal performance.
    • Tighten the mounting screws to the recommended torque to ensure good thermal contact without causing mechanical stress.

  3. Biasing and Operation:

    • Apply the gate-source voltage (VGS) within the specified range to avoid damage.
    • Ensure that the drain-source voltage (VDS) does not exceed the maximum rating.
    • Monitor the junction temperature (TJ) to prevent overheating and ensure reliable operation.

  4. Testing:

    • Use appropriate test equipment and methods to measure the parameters.
    • Follow the test conditions specified in the parameter table for accurate results.

  5. Application Notes:

    • The device is suitable for high-voltage, high-current applications such as power supplies, motor control, and lighting.
    • Consider the on-state resistance (RDS(on)) and switching losses when designing the circuit.
    • Use external components like gate resistors and snubber circuits to optimize performance and protect the device.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)

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