TF7N65
TF7N65

 

TF7N65

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Category: Available (Qty:9999999)
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Description

BUY TF7N65 https://www.utsource.net/itm/p/12444965.html

Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - 650 - V -
Gate-Source Voltage VGS -20 - 20 V -
Continuous Drain Current ID - 10 - A TC = 25°C, VDS = 650V
Pulse Drain Current IDpeak - 30 - A tp = 10μs, Duty Cycle ≤ 1%
Total Power Dissipation PTOT - 150 - W TC = 25°C
Junction Temperature TJ - - 150 °C -
Storage Temperature Range TSTG -55 - 150 °C -
Thermal Resistance, Junction to Case RθJC - 0.5 - °C/W -
Input Capacitance Ciss - 1500 - pF VDS = 400V, f = 1MHz
Output Capacitance Coss - 250 - pF VDS = 400V, f = 1MHz
Reverse Transfer Capacitance Crss - 100 - pF VDS = 400V, f = 1MHz
Gate Charge QG - 60 - nC VGS = 15V, VDS = 400V, ID = 10A
Threshold Voltage VGS(th) 2.0 4.0 6.0 V ID = 1mA, TA = 25°C
On-State Resistance RDS(on) - 0.7 - Ω VGS = 10V, ID = 10A, TA = 25°C

Instructions for Use:

  1. Handling and Storage:

    • Store in a dry environment with a temperature range of -55°C to 150°C.
    • Handle with care to avoid mechanical damage.

  2. Mounting:

    • Ensure proper heat sinking to maintain junction temperature below 150°C.
    • Use appropriate mounting hardware to secure the device.

  3. Electrical Connections:

    • Connect the drain, source, and gate terminals as specified in the circuit design.
    • Ensure that the gate-source voltage (VGS) does not exceed ±20V to prevent damage.

  4. Operating Conditions:

    • Do not exceed the maximum drain-source voltage (VDS) of 650V.
    • Limit the continuous drain current (ID) to 10A at a case temperature of 25°C.
    • For pulse operation, ensure the pulse duration (tp) is within 10μs and the duty cycle is ≤1%.

  5. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it remains below 150°C.
    • Use thermal resistance (RθJC) data to calculate heat dissipation requirements.

  6. Capacitance and Charge:

    • Consider the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) when designing the circuit to minimize switching losses.
    • Account for the gate charge (QG) in the gate driver design to optimize switching performance.

  7. Threshold Voltage and On-State Resistance:

    • The threshold voltage (VGS(th)) should be between 2.0V and 6.0V to ensure reliable turn-on.
    • The on-state resistance (RDS(on)) should be monitored to ensure efficient operation, especially under high current conditions.

  8. Testing and Validation:

    • Perform thorough testing under various operating conditions to validate the performance and reliability of the device.
    • Follow recommended test procedures to ensure accurate measurement of device parameters.
(For reference only)

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