MMBT4403: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage (Reverse)	V_CEO	-	50	-	V
Collector-Base Voltage (Reverse)	V_CBO	-	60	-	V
Emitter-Base Voltage (Reverse)	V_EBO	-	5	-	V
Collector Current (Continuous)	I_C	-	100	-	mA
Collector Current (Pulse)	I_CM	-	200	-	mA
Base Current (Continuous)	I_B	-	5	-	mA
Power Dissipation	P_T	-	310	-	mW
Operating Junction Temperature	T_J	-40	-	150	掳C
Storage Temperature Range	T_STG	-65	-	150	掳C
Forward Current Transfer Ratio (h_FE)	h_FE	100	300	800	-
Collector-Emitter Saturation Voltage	V_CE(sat)	-	0.2	0.4	V
Base-Emitter Saturation Voltage	V_BE(sat)	-	0.7	1.2	V
Transition Frequency	f_T	-	300	-	MHz

Handling Precautions:
- Handle with care to avoid damage.
- Use appropriate anti-static measures to prevent electrostatic discharge (ESD).
Mounting:
- Ensure proper alignment of the leads during soldering.
- Soldering temperature should not exceed 260掳C for more than 10 seconds.
- Avoid excessive mechanical stress on the leads.
Operating Conditions:
- Ensure that the operating conditions (voltage, current, and temperature) do not exceed the maximum ratings.
- For reliable operation, keep the junction temperature within the specified range.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Follow recommended storage temperature ranges to prevent damage.
Testing:
- Use a multimeter or transistor tester to verify the functionality.
- Test under controlled conditions to avoid damaging the component.
Applications:
- Suitable for general-purpose switching and amplification applications.
- Commonly used in consumer electronics, automotive, and industrial control systems.

By following these guidelines, you can ensure the reliable and efficient use of the MMBT4403 transistor.

(For reference only)