BUK455-100A

BUK455-100A

Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY BUK455-100A https://www.utsource.net/itm/p/12399217.html

Below is the parameter table and instructions for the BUK455-100A, a high-voltage N-channel MOSFET.

Parameter Table

Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage ( V_ ) - - 1000 V
Gate-Source Voltage ( V_ ) -20 - 20 V
Continuous Drain Current ( I_ ) - 5 8 A ( T_ = 25掳C )
Pulsed Drain Current ( I_{D(pulse)} ) - - 30 A ( t_p = 10 mu s, f = 100 Hz )
Total Power Dissipation ( P_T ) - - 125 W ( T_C = 25掳C )
Thermal Resistance (Junction to Case) ( R_{theta JC} ) - - 1.0 掳C/W
Thermal Resistance (Junction to Ambient) ( R_{theta JA} ) - - 62.5 掳C/W
Input Capacitance ( C_ ) - 3700 - pF ( V_ = 500 V, V_ = 0 V )
Output Capacitance ( C_ ) - 100 - pF ( V_ = 500 V, V_ = 0 V )
Gate-Source Threshold Voltage ( V_{GS(th)} ) 2.0 3.5 5.0 V ( I_D = 250 mu A, T_A = 25掳C )
On-State Resistance ( R_{DS(on)} ) - 1.0 1.5 ( V_ = 10 V, I_D = 5 A )
Gate Charge ( Q_g ) - 90 - nC ( V_ = 500 V, V_ = 10 V )
Turn-On Delay Time ( t_{d(on)} ) - 100 - ns ( V_ = 500 V, V_ = 10 V )
Rise Time ( t_r ) - 100 - ns ( V_ = 500 V, V_ = 10 V )
Turn-Off Delay Time ( t_{d(off)} ) - 100 - ns ( V_ = 500 V, V_ = 10 V )
Fall Time ( t_f ) - 100 - ns ( V_ = 500 V, V_ = 10 V )

Instructions

  1. Handling and Storage:

    • Store in a dry, cool place.
    • Handle with care to avoid damage to the leads and body.
    • Use proper ESD protection when handling the device.
  2. Mounting:

    • Ensure good thermal contact between the MOSFET and the heatsink.
    • Use a suitable thermal compound to enhance heat dissipation.
    • Torque the mounting screws to the recommended values to ensure proper contact.
  3. Biasing:

    • Apply the gate-source voltage (( V_ )) within the specified limits to avoid damage.
    • Use a gate resistor to limit the gate current and prevent oscillations.
  4. Operation:

    • Ensure that the drain-source voltage (( V_ )) does not exceed the maximum rating.
    • Keep the junction temperature (( T_J )) below the maximum allowable value to prevent thermal runaway.
    • Use a snubber circuit if necessary to protect against voltage spikes during switching.
  5. Testing:

    • Use a suitable test setup to measure the parameters accurately.
    • Follow the conditions specified in the parameter table for accurate measurements.
  6. Safety:

    • Always follow safety guidelines when working with high voltages.
    • Use appropriate protective equipment and grounding techniques.

By following these instructions, you can ensure reliable and safe operation of the BUK455-100A MOSFET.

(For reference only)

More detail about Utsource Holding Company Limited
Utsource Holding Company Limited
Utsource Holding Company Limited Electronic Component Wholesaler, IC Chip Distributor, IGBT Module Supplier in California, USA | Utsource Holding Company Limited