2SK1120: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-to-Source Breakdown Voltage	BVdss	-	-	300	V	Vgs = 0V, Id = 1mA
Gate-to-Source Breakdown Voltage	BVgss	-	-	20	V	Id = 1mA
Continuous Drain Current	Id	-	-	15	A	Tc = 25掳C, Vds = 25V
Pulse Drain Current (10ms)	Ipp	-	-	30	A	Tc = 25掳C, Vds = 25V
Gate Threshold Voltage	Vgs(th)	2	4	6	V	Id = 1mA, Vds = 10V
On-State Resistance	Rds(on)	-	0.35	0.7	惟	Vgs = 10V, Id = 15A
Input Capacitance	Ciss	-	1500	-	pF	Vds = 0V, f = 1MHz
Output Capacitance	Coss	-	300	-	pF	Vds = 0V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	100	-	pF	Vds = 0V, f = 1MHz
Total Gate Charge	Qg	-	100	-	nC	Vgs = 10V, Id = 15A
Maximum Junction Temperature	Tj	-	-	175	掳C	-
Storage Temperature Range	Tstg	-55	-	150	掳C	-

Mounting and Handling:
- Handle the device with care to avoid mechanical stress.
- Ensure proper heat sinking to manage thermal resistance and maintain the junction temperature within the specified range.
Biasing:
- Apply the gate voltage (Vgs) carefully to avoid exceeding the maximum gate-to-source breakdown voltage (BVgss).
- Ensure the drain current (Id) does not exceed the continuous or pulse ratings.
Operation:
- Operate the device within the specified temperature range to ensure reliable performance.
- Monitor the on-state resistance (Rds(on)) to ensure efficient operation and minimize power loss.
Storage:
- Store the device in a dry environment to prevent moisture damage.
- Follow the storage temperature range (Tstg) to avoid degradation.
Testing:
- Use appropriate test equipment to measure parameters such as Vgs(th), Rds(on), and capacitances.
- Ensure that the test conditions match those specified in the datasheet for accurate results.
Safety:
- Always follow safety guidelines when handling high voltages and currents.
- Use protective equipment and follow proper grounding procedures to prevent electrical shock.

(For reference only)