Description
BUY FQA70N10 https://www.utsource.net/itm/p/12379377.html
Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
Drain-source on-resistance |
RDS(on) |
VGS = 10V, ID = 7A |
- |
7.0 |
- |
mΩ |
Gate-source threshold voltage |
VGS(th) |
ID = 250μA |
1.0 |
1.5 |
2.5 |
V |
Continuous drain current |
ID |
TC = 25°C |
- |
- |
7.0 |
A |
Power dissipation |
PD |
TC = 25°C |
- |
- |
64 |
W |
Junction temperature |
TJ |
- |
- |
- |
150 |
°C |
Storage temperature range |
TSTG |
- |
-55 |
- |
150 |
°C |
Instructions for FQA70N10
Handling and Storage:
- Store the device in a dry, cool place to prevent damage.
- Handle with care to avoid static damage; use appropriate ESD protection.
Installation:
- Ensure that the device is correctly oriented during installation to match the circuit layout.
- Use a heatsink if operating near maximum power dissipation to maintain optimal temperature.
Operation:
- Do not exceed the maximum ratings specified in the table to prevent damage or malfunction.
- Operate within the recommended operating conditions for reliable performance.
Testing:
- When testing the device, ensure that the gate-source voltage (VGS) does not exceed the maximum threshold to avoid damaging the gate oxide layer.
- Verify the drain-source on-resistance (RDS(on)) at the specified conditions to confirm proper functionality.
Safety:
- Always adhere to safety guidelines when working with electrical components.
- Disconnect power sources before handling the device to avoid electrical shock.
(For reference only)
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