FQA70N10

FQA70N10

Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY FQA70N10 https://www.utsource.net/itm/p/12379377.html

Parameter Symbol Conditions Min Typ Max Unit
Drain-source on-resistance RDS(on) VGS = 10V, ID = 7A - 7.0 -
Gate-source threshold voltage VGS(th) ID = 250μA 1.0 1.5 2.5 V
Continuous drain current ID TC = 25°C - - 7.0 A
Power dissipation PD TC = 25°C - - 64 W
Junction temperature TJ - - - 150 °C
Storage temperature range TSTG - -55 - 150 °C

Instructions for FQA70N10

  1. Handling and Storage:

    • Store the device in a dry, cool place to prevent damage.
    • Handle with care to avoid static damage; use appropriate ESD protection.
  2. Installation:

    • Ensure that the device is correctly oriented during installation to match the circuit layout.
    • Use a heatsink if operating near maximum power dissipation to maintain optimal temperature.
  3. Operation:

    • Do not exceed the maximum ratings specified in the table to prevent damage or malfunction.
    • Operate within the recommended operating conditions for reliable performance.
  4. Testing:

    • When testing the device, ensure that the gate-source voltage (VGS) does not exceed the maximum threshold to avoid damaging the gate oxide layer.
    • Verify the drain-source on-resistance (RDS(on)) at the specified conditions to confirm proper functionality.
  5. Safety:

    • Always adhere to safety guidelines when working with electrical components.
    • Disconnect power sources before handling the device to avoid electrical shock.
(For reference only)

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