STW35N65M5: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	V_DS	-650	-	-	V	Maximum drain-to-source voltage (reverse)
Gate-Source Voltage	V_GS	-15	-	20	V	Maximum gate-to-source voltage
Continuous Drain Current	I_D	-	35	-	A	Continuous drain current at T_C = 25掳C
Pulse Drain Current	I_D(pulse)	-	110	-	A	Non-repetitive peak pulse drain current (10 渭s, 1% duty cycle)
Power Dissipation	P_TOT	-	-	170	W	Total power dissipation (T_C = 25掳C)
Junction Temperature	T_J	-55	-	150	掳C	Operating junction temperature range
Storage Temperature	T_STG	-55	-	150	掳C	Storage temperature range
Gate Charge	Q_G	-	94	-	nC	Total gate charge at V_DS = 400V, V_GS = 15V
Input Capacitance	C_iss	-	3400	-	pF	Input capacitance at V_DS = 400V, f = 1 MHz
Output Capacitance	C_oss	-	800	-	pF	Output capacitance at V_DS = 400V, V_GS = 0V, f = 1 MHz
Reverse Transfer Capacitance	C_rss	-	1000	-	pF	Reverse transfer capacitance at V_DS = 400V, V_GS = 0V, f = 1 MHz
On-State Resistance	R_DS(on)	-	0.175	-	惟	On-state resistance at V_GS = 10V, I_D = 35A, T_J = 25掳C
Threshold Voltage	V_GS(th)	2.5	3.5	4.5	V	Gate threshold voltage
Turn-On Delay Time	t_d(on)	-	65	-	ns	Turn-on delay time at V_DS = 400V, I_D = 35A, V_GS = 15V
Rise Time	t_r	-	35	-	ns	Rise time at V_DS = 400V, I_D = 35A, V_GS = 15V
Turn-Off Delay Time	t_d(off)	-	65	-	ns	Turn-off delay time at V_DS = 400V, I_D = 35A, V_GS = 0V
Fall Time	t_f	-	35	-	ns	Fall time at V_DS = 400V, I_D = 35A, V_GS = 0V

Handling and Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Handle the device with care to avoid mechanical stress or damage to the leads.
Mounting:
- Ensure proper thermal management by using a heat sink if necessary.
- Apply thermal paste between the device and the heat sink for better thermal conductivity.
- Secure the device to the PCB using recommended soldering techniques to ensure a reliable connection.
Electrical Connections:
- Connect the gate and source pins carefully to avoid short circuits.
- Use appropriate gate drive circuits to ensure the device operates within its safe operating area (SOA).
- Ensure that the gate voltage is within the specified range to prevent damage to the gate oxide.
Operating Conditions:
- Monitor the junction temperature to ensure it does not exceed the maximum rating.
- Keep the drain-source voltage within the specified limits to avoid breakdown.
- Operate the device within the recommended current and power dissipation limits.
Testing:
- Use a suitable test setup to verify the performance parameters of the device.
- Test the device under conditions similar to those expected in the final application.
Safety Precautions:
- Always use appropriate safety equipment when handling high-voltage circuits.
- Follow all relevant safety guidelines and regulations to prevent electrical hazards.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.

(For reference only)