BUY SI2343CDS-T1-GE3 https://www.utsource.net/itm/p/12358184.html
| Parameter | Description | Value |
|---|---|---|
| Part Number | Full part number of the component | SI2343CDS-T1-GE3 |
| Type | Type of semiconductor device | N-Channel MOSFET |
| Package | Package type | TO-252 (DPAK) |
| Vds (Drain-Source Voltage) | Maximum voltage that can be applied between drain and source | 60V |
| Id (Continuous Drain Current) | Continuous current that can flow from drain to source | 8.7A at 25°C, 4.9A at 70°C |
| Rds(on) (On-Resistance) | Resistance between drain and source when fully on | 30 mΩ max at Vgs = 10V |
| Vgs(th) (Gate Threshold Voltage) | Minimum gate-to-source voltage needed to start conducting | 1.5V to 3.5V |
| Qg (Total Gate Charge) | Total charge required to turn on the MOSFET | 18 nC typ |
| Operating Temperature Range | Temperature range for operation | -55°C to +175°C |
| Storage Temperature Range | Temperature range for storage | -65°C to +150°C |
| Power Dissipation (Pd) | Maximum power dissipation | 3.2W at TJ = 25°C |
