Description
BUY KTB2510,B2510 https://www.utsource.net/itm/p/11896385.html
Parameter |
KTB2510 |
B2510 |
Type |
Thyristor |
Bipolar Transistor |
Collector-Emitter Voltage (Vceo) |
- |
80V |
Collector Current (Ic) |
- |
1.5A |
Power Dissipation (Ptot) |
- |
625mW |
Base-Emitter Voltage (Vbe(on)) |
- |
1.2V |
Storage Temperature (Tstg) |
-25掳C to +85掳C |
-55掳C to +150掳C |
Operating Temperature (Tj) |
-25掳C to +85掳C |
-55掳C to +150掳C |
Package Type |
TO-92 |
SOT-23 |
Instructions for Use:
KTB2510:
- Mounting: Ensure the device is mounted in a way that it can dissipate heat effectively, especially if operating near its maximum temperature range.
- Handling: Handle with care to avoid damage to the leads and body. Use appropriate anti-static measures.
- Testing: Test the device in a controlled environment to ensure it operates within specified parameters.
B2510:
- Mounting: Mount the device on a suitable PCB with adequate clearance to prevent short circuits. Ensure good thermal management if used in high-power applications.
- Handling: Follow standard ESD precautions when handling the component.
- Testing: Verify all connections are secure and test functionality using a signal generator and oscilloscope if possible.
Note: Specific application details and additional parameters may be found in the respective datasheets for each component.
(For reference only)
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