2SB548: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V_CEO	-	-	600	V	IC = 0.1 mA, IB = 0
Emitter-Collector Voltage	V_ECS	-	-	600	V	IC = 0.1 mA, IB = 0
Base-Emitter Voltage (Saturation)	V_BE(sat)	1.2	1.5	1.8	V	IC = 150 mA, IB = 15 mA
Collector Current (Continuous)	I_C	-	-	150	mA	Tc = 25掳C
Collector Current (Pulse)	I_CM	-	-	300	mA	t = 1 ms, Tc = 25掳C
Power Dissipation	P_T	-	-	625	mW	Tc = 25掳C
Operating Junction Temperature	T_J	-55	-	150	掳C	-
Storage Temperature Range	T_STG	-55	-	150	掳C	-
Transition Frequency	f_T	-	200	-	MHz	IC = 10 mA, VCE = 10 V

Mounting and Handling:
- Handle the transistor with care to avoid mechanical stress.
- Ensure proper heat dissipation if operating at high power levels.
Biasing:
- For optimal performance, bias the base-emitter junction to ensure it operates within the specified V_BE(sat) range.
- Use appropriate resistors to limit base current and prevent damage to the transistor.
Operating Conditions:
- Do not exceed the maximum ratings for collector-emitter voltage, collector current, and power dissipation.
- Monitor the junction temperature to ensure it stays within the operating range.
Storage:
- Store the transistor in a dry environment within the specified storage temperature range to prevent damage.
Testing:
- Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
- Test under controlled conditions to avoid exceeding maximum ratings.
Soldering:
- Use a low-wattage soldering iron to avoid overheating the transistor.
- Ensure the soldering iron is properly grounded to prevent electrostatic discharge (ESD) damage.
Circuit Design:
- Design the circuit to include necessary protection components such as diodes for reverse voltage protection and capacitors for filtering.
- Consider the switching speed requirements and choose appropriate values for external components.

(For reference only)