IRF2807 IRF2807PBF TO-220: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit
Continuous Drain Current	ID	-	60	-	A
Pulse Drain Current	IDM	-	120	-	A (t = 10 渭s)
Gate-Source Voltage	VGS	-15	-	20	V
Drain-Source Breakdown Voltage	V(BR)DSS	55	-	-	V
Gate-Threshold Voltage	VGS(th)	2.0	3.0	4.0	V
On-State Resistance	RDS(on)	-	4.5	-	m惟 (VGS = 10V)
Total Power Dissipation	PD	-	140	-	W (Tc = 25掳C)
Junction Temperature	Tj	-55	-	150	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Mounting:
- Ensure proper heat sinking to maintain junction temperature within the specified range.
- Use thermal compound between the device and the heatsink to improve thermal conductivity.
Electrical Connections:
- Connect the drain (D) to the high-voltage side of the circuit.
- Connect the source (S) to the low-voltage side or ground.
- Apply the gate (G) signal to control the switching of the MOSFET.
Gate Drive:
- Apply a gate-source voltage (VGS) within the range of 2.0V to 20V to turn the MOSFET on.
- To turn the MOSFET off, ensure VGS is below the threshold voltage (VGS(th)).
Overcurrent Protection:
- Implement overcurrent protection to prevent damage from excessive drain current (ID).
Thermal Management:
- Monitor the junction temperature (Tj) to avoid exceeding the maximum rating of 150掳C.
- Use forced air cooling or a larger heatsink if necessary to manage heat dissipation.
Storage:
- Store the device in a dry, cool environment within the storage temperature range (-55掳C to 150掳C).
Handling:
- Handle with care to avoid mechanical damage to the leads and body.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage to the sensitive gate structure.

(For reference only)