Description
BUY FDA50N50 ORIGINAL GOODS IN STOCK https://www.utsource.net/itm/p/11756250.html
Parameter |
Description |
Part Number |
FDA50N50 |
Type |
N-Channel MOSFET |
VDS (Max) |
500V |
VGS (Max) |
卤20V |
ID (Max) |
50A (Pulsed) / 18A (Continuous) |
RDS(on) (Max) |
0.035惟 @ VGS = 10V |
Power Dissipation (Max) |
180W |
Operating Temperature |
-55掳C to +150掳C |
Package Type |
TO-247 |
Lead Free |
Yes |
RoHS Compliant |
Yes |
Instructions for Use:
Handling and Storage:
- Store in a dry, cool place away from direct sunlight.
- Handle with care to avoid damage to the leads and package.
- Use appropriate ESD (Electrostatic Discharge) protection when handling.
Mounting:
- Ensure proper heat sinking to manage thermal dissipation, especially during high current operations.
- Use thermal paste between the MOSFET and heat sink for better thermal conductivity.
- Tighten the mounting screws to the recommended torque specifications to ensure good thermal contact.
Biasing:
- Apply gate voltage (VGS) within the specified range to avoid damaging the MOSFET.
- Use a gate resistor to limit inrush current and prevent oscillations.
Operation:
- Do not exceed the maximum ratings for VDS, VGS, and ID.
- Monitor the temperature of the device during operation to ensure it remains within the operating temperature range.
- Use the device within its safe operating area (SOA) to avoid thermal runaway and potential failure.
Testing:
- Test the device in a controlled environment to verify its performance before integrating it into the final application.
- Use appropriate test equipment and follow safety guidelines to prevent damage to the device or injury.
Disposal:
- Dispose of the device in accordance with local environmental regulations.
- Recycle the device if possible to minimize environmental impact.
(For reference only)
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