IRFB4227 IRFB4227PBF TO-220: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Value	Unit
Maximum Drain-Source Voltage	V_DSS	55	V
Maximum Gate-Source Voltage	V_GSS	卤20	V
Maximum Continuous Drain Current (T_C=25掳C)	I_D(25掳C)	78	A
Maximum Continuous Drain Current (T_C=100掳C)	I_D(100掳C)	53	A
Maximum Pulse Drain Current (t_p=10渭s, I_GM=6A)	I_DM	290	A
Total Power Dissipation (T_C=25掳C)	P_TOT(25掳C)	175	W
Total Power Dissipation (T_C=100掳C)	P_TOT(100掳C)	100	W
Junction Temperature Range	T_J	-55 to +175	掳C
Storage Temperature Range	T_STG	-65 to +150	掳C

Mounting and Handling:
- Ensure proper heat sinking to manage the thermal resistance.
- Handle the device with care to avoid mechanical damage.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use short and wide leads to minimize inductance and improve high-frequency performance.
Thermal Management:
- Ensure adequate cooling to keep the junction temperature within the specified range.
- Use a heatsink with sufficient thermal conductivity and surface area.
Gate Drive:
- Apply a gate voltage within the specified limits to avoid damaging the gate oxide.
- Use a low-impedance driver to minimize switching losses.
Overcurrent Protection:
- Implement overcurrent protection to prevent damage from excessive current.
- Monitor the drain current and use a current-limiting circuit if necessary.
Storage and Handling:
- Store the device in a dry, cool place away from direct sunlight.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage.
Testing:
- Perform initial testing under controlled conditions to ensure proper operation.
- Verify all connections and settings before applying power.
Compliance:
- Ensure that the application complies with relevant safety and regulatory standards.

(For reference only)