2SA1015GR,2SA1015-GR,A1015GR: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Max	Unit	Conditions
Collector-Emitter Voltage	V_CEO	-	80	V	IC = 0.1A, T_A = 25掳C
Collector-Base Voltage	V_CBO	-	80	V	IC = 0, T_A = 25掳C
Emitter-Base Voltage	V_EBO	-	5	V	IE = 5mA, T_A = 25掳C
Collector Current	I_C	-	0.5	A	V_CE = 30V, T_A = 25掳C
Base Current	I_B	-	0.05	A	V_CE = 30V, T_A = 25掳C
Power Dissipation	P_T	-	625	mW	T_C = 25掳C
Operating Temperature	T_A	-55	150	掳C	-
Storage Temperature	T_STG	-55	150	掳C	-
DC Current Gain	h_FE	20	400	-	IC = 50mA, V_CE = 10V
Transition Frequency	f_T	-	300	MHz	IC = 1mA, V_CE = 3V

Handling Precautions:
- Avoid exposing the transistor to temperatures outside the specified operating range.
- Use appropriate heat sinks if the power dissipation exceeds safe levels.
Mounting:
- Ensure proper alignment and secure mounting to prevent mechanical stress.
- Use thermal paste between the transistor and heat sink for efficient heat dissipation.
Biasing:
- Ensure that the base current is within the specified limits to avoid damage to the transistor.
- Use a resistor in series with the base to limit the current.
Testing:
- Test the transistor under controlled conditions to ensure it meets the specified parameters.
- Use a multimeter or transistor tester to verify the functionality.
Storage:
- Store the transistor in a dry, cool place away from direct sunlight.
- Keep the transistor in its original packaging until ready for use to prevent static damage.
Soldering:
- Use a soldering iron with a temperature of around 300掳C to 350掳C.
- Solder quickly to avoid overheating the transistor.
Applications:
- Suitable for general-purpose amplification and switching applications.
- Can be used in audio amplifiers, power supplies, and control circuits.

(For reference only)