Description
BUY 2SK2962,K2962 https://www.utsource.net/itm/p/11725083.html
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Notes |
Drain-Source Voltage |
V(DS) |
- |
- |
500 |
V |
|
Gate-Source Voltage |
V(GS) |
-20 |
- |
10 |
V |
|
Continuous Drain Current |
I(D) |
- |
30 |
- |
A |
|
Pulse Drain Current |
I(DM) |
- |
60 |
- |
A |
t = 10 渭s, I(GS) = 0 A |
Power Dissipation |
P(T) |
- |
250 |
- |
W |
T(C) = 25掳C |
Junction Temperature |
T(J) |
- |
- |
175 |
掳C |
|
Storage Temperature |
T(STG) |
-55 |
- |
150 |
掳C |
|
Instructions for Use:
Handling:
- Handle with care to avoid damage to the leads and the body of the device.
- Use appropriate ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within safe limits.
- Use thermal compound between the device and the heat sink to improve thermal conductivity.
Biasing:
- Apply the gate-source voltage (V(GS)) within the specified range to avoid damaging the gate oxide.
- Ensure the drain-source voltage (V(DS)) does not exceed the maximum rating to prevent breakdown.
Current Handling:
- Do not exceed the continuous drain current (I(D)) or pulse drain current (I(DM)) ratings.
- For pulse operation, ensure the pulse width and frequency are within the specified limits to avoid overheating.
Thermal Management:
- Monitor the junction temperature (T(J)) to ensure it does not exceed 175掳C.
- Store the device in a temperature-controlled environment within the storage temperature range (-55掳C to 150掳C).
Testing:
- Use appropriate test equipment and methods to verify the performance of the device.
- Follow the datasheet specifications for testing parameters and conditions.
Applications:
- Suitable for high-power switching applications, such as power supplies, motor control, and inverters.
- Ensure the device is used within its operational limits for reliable performance and longevity.
(For reference only)
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