P80NF55: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	V_DS	-	-	550	V	Maximum voltage between drain and source with the gate open.
Gate-Source Voltage	V_GS	-15	-	20	V	Maximum voltage between gate and source.
Continuous Drain Current	I_D	-	80	-	A	Continuous current flowing from drain to source at T_J = 25掳C.
Pulse Drain Current	I_D(p)	-	160	-	A	Peak pulse current flowing from drain to source at T_C = 25掳C, t_p = 10 渭s.
Power Dissipation	P_TOT	-	-	340	W	Total power dissipation at T_C = 25掳C.
Junction Temperature	T_J	-	-	175	掳C	Maximum operating junction temperature.
Storage Temperature	T_STG	-55	-	150	掳C	Temperature range for storage and non-operating conditions.
Thermal Resistance	R_胃JC	-	0.5	-	掳C/W	Junction-to-case thermal resistance.

Handling Precautions:
- Handle the P80NF55 with care to avoid static discharge which can damage the device.
- Use proper ESD (Electrostatic Discharge) protection equipment when handling the component.
Mounting:
- Ensure that the mounting surface is clean and flat to ensure good thermal contact.
- Apply a thin layer of thermal compound between the device and the heat sink to improve thermal conductivity.
Biasing:
- Apply the gate-source voltage (V_GS) within the specified limits to avoid damaging the gate oxide.
- Ensure that the gate-source voltage is stable and free from excessive noise.
Current Limiting:
- Use appropriate current limiting resistors or circuits to prevent exceeding the maximum continuous drain current (I_D).
- For pulse applications, ensure that the pulse duration does not exceed the specified limits to avoid overheating.
Thermal Management:
- Monitor the junction temperature (T_J) to ensure it does not exceed the maximum operating temperature.
- Use a heat sink with adequate cooling capacity to dissipate the power generated by the device.
Storage:
- Store the P80NF55 in a dry, cool place within the specified storage temperature range.
- Avoid exposure to extreme temperatures and humidity to prevent degradation of the component.
Testing:
- Use a suitable test setup to verify the performance of the P80NF55 before integrating it into a circuit.
- Follow the datasheet specifications for testing parameters and conditions.

(For reference only)