P12NM50FP
P12NM50FP

 

P12NM50FP

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Category: Available (Qty:9999999)
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Description

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Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDS - 500 - V Maximum voltage that can be applied between the drain and source terminals with the gate open.
Gate-Source Voltage VGS -15 0 20 V Maximum voltage that can be applied between the gate and source terminals.
Continuous Drain Current ID - 12 - A Maximum continuous current that can flow through the drain terminal when the device is on.
Pulse Drain Current ID(p) - 36 - A Maximum pulse current that can flow through the drain terminal for a short duration (typically 10 ms).
Power Dissipation PD - - 120 W Maximum power dissipation at the specified operating conditions.
Junction Temperature TJ - - 150 掳C Maximum temperature of the semiconductor junction.
Storage Temperature Range TSTG -55 - 150 掳C Temperature range over which the device can be stored without damage.
Total Gate Charge QG - 80 - nC Total charge required to switch the device from off to on state.
Input Capacitance Ciss - 1700 - pF Capacitance measured between the gate and source terminals with the drain shorted to the source.
Output Capacitance Coss - 420 - pF Capacitance measured between the drain and source terminals with the gate shorted to the source.
Reverse Transfer Capacitance Crss - 340 - pF Capacitance measured between the gate and drain terminals with the source grounded.
On-State Resistance RDS(on) - 0.55 - 惟 Resistance between the drain and source terminals when the device is fully on.
Gate Threshold Voltage VGS(th) 2.0 4.0 6.0 V Minimum gate-to-source voltage required to start turning the device on.

Instructions for Use:

  1. Handling and Storage:

    • Store the device in a dry, cool place within the specified storage temperature range.
    • Handle the device with care to avoid mechanical damage or electrostatic discharge (ESD).

  2. Mounting:

    • Ensure proper heat sinking to manage the maximum power dissipation and junction temperature.
    • Follow the recommended PCB layout guidelines to minimize parasitic inductances and capacitances.

  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified limits to avoid damaging the device.
    • Use appropriate gate drive circuits to ensure reliable switching and minimize switching losses.

  4. Current Limiting:

    • Do not exceed the continuous drain current (ID) or pulse drain current (ID(p)) ratings.
    • Implement current limiting or protection circuits if necessary to prevent overcurrent conditions.

  5. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rating.
    • Use thermal vias and adequate heatsinks to dissipate heat effectively.

  6. Capacitance Considerations:

    • Account for the input, output, and reverse transfer capacitances in your circuit design to optimize performance and reduce switching losses.

  7. Testing:

    • Test the device under controlled conditions to verify its performance and reliability.
    • Refer to the datasheet for specific test conditions and procedures.

  8. Safety:

    • Follow all safety guidelines and regulations when handling and using the device.
    • Ensure that the device is properly isolated and protected from overvoltage and overcurrent conditions.
(For reference only)

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