Description
BUY IPD122N10N3G,122N10N https://www.utsource.net/itm/p/11722929.html
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Drain-Source Voltage |
VDS |
- |
- |
100 |
V |
Gate-Source Voltage |
VGS |
-15 |
- |
15 |
V |
Continuous Drain Current |
ID |
- |
122 |
- |
A |
Pulse Drain Current (tp = 10 渭s) |
IDpeak |
- |
366 |
- |
A |
Power Dissipation |
PTOT |
- |
- |
250 |
W |
Junction Temperature |
TJ |
-55 |
- |
175 |
掳C |
Storage Temperature Range |
Tstg |
-55 |
- |
150 |
掳C |
Instructions for Use:
Mounting and Handling:
- Handle the device with care to avoid mechanical damage.
- Ensure proper heat sinking to manage thermal dissipation effectively.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use short and wide leads to minimize inductance and resistance.
Gate Drive:
- Apply a gate-source voltage (VGS) within the specified range to ensure reliable operation.
- Use a gate resistor to control the switching speed and reduce ringing.
Thermal Management:
- Ensure the junction temperature (TJ) remains within the specified limits.
- Use a heatsink or cooling solution to dissipate heat effectively.
Storage and Operation:
- Store the device in a dry, cool place to prevent moisture damage.
- Operate the device within the specified storage temperature range to avoid damage.
Surge Current:
- Be cautious with surge currents; the pulse drain current (IDpeak) should not be exceeded for durations longer than specified.
Safety Precautions:
- Follow all safety guidelines to prevent electrical shock and damage to equipment.
- Use appropriate protective gear when handling high-voltage circuits.
Testing:
- Perform initial testing under controlled conditions to verify correct operation.
- Monitor performance parameters regularly to ensure continued reliability.
(For reference only)
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