Description
BUY IRG4BC30KDPBF,IRG4BC30KD,G4BC30KD https://www.utsource.net/itm/p/11722890.html
Parameter |
IRG4BC30KDPBF |
IRG4BC30KD |
G4BC30KD |
Part Number |
IRG4BC30KDPBF |
IRG4BC30KD |
G4BC30KD |
Type |
MOSFET |
MOSFET |
MOSFET |
Package |
D2PAK (TO-263) |
D2PAK (TO-263) |
D2PAK (TO-263) |
VDSS (V) |
550 |
550 |
550 |
RDS(on) (惟) |
0.18 (at VGS=10V) |
0.18 (at VGS=10V) |
0.18 (at VGS=10V) |
ID (A) |
30 |
30 |
30 |
Ptot (W) |
170 |
170 |
170 |
Qg (nC) |
140 |
140 |
140 |
Qgd (nC) |
38 |
38 |
38 |
fT (MHz) |
1.6 |
1.6 |
1.6 |
VGS(th) (V) |
2.0 to 4.0 |
2.0 to 4.0 |
2.0 to 4.0 |
Operating Temperature (掳C) |
-55 to 150 |
-55 to 150 |
-55 to 150 |
Storage Temperature (掳C) |
-65 to 150 |
-65 to 150 |
-65 to 150 |
Moisture Sensitivity Level (MSL) |
3 (168 hours) |
3 (168 hours) |
3 (168 hours) |
Instructions:
Handling Precautions:
- ESD Protection: These devices are sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and assembly.
- Moisture Sensitivity: Store the devices in a dry environment and follow the reflow soldering guidelines for moisture-sensitive components.
Mounting and Assembly:
- Heatsinking: Ensure adequate heatsinking to manage the power dissipation, especially when operating at high currents or in high ambient temperatures.
- Soldering: Follow the recommended soldering profiles for D2PAK packages to avoid thermal shock and ensure reliable connections.
Electrical Characteristics:
- VGS Range: Operate within the specified gate-to-source voltage range to prevent damage to the device.
- RDS(on): The on-state resistance is highly dependent on the gate-to-source voltage. Ensure VGS is sufficient to minimize RDS(on) and reduce power losses.
Thermal Management:
- Thermal Resistance: The thermal resistance (R胃JC) from junction to case should be considered in the design to ensure the junction temperature does not exceed the maximum rating.
Testing and Validation:
- Parameter Verification: Verify key parameters such as VDSS, ID, and RDS(on) during testing to ensure the device meets the required specifications.
Application Notes:
- Circuit Design: Refer to the datasheet and application notes for specific circuit design recommendations, including gate drive circuits and snubber networks for high-frequency applications.
For detailed information, refer to the datasheets provided by the manufacturer.
(For reference only)
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