IRG4BC30KDPBF,IRG4BC30KD,G4BC30KD

IRG4BC30KDPBF,IRG4BC30KD,G4BC30KD

Category: Available (Qty:9999999)
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Description

BUY IRG4BC30KDPBF,IRG4BC30KD,G4BC30KD https://www.utsource.net/itm/p/11722890.html

Parameter IRG4BC30KDPBF IRG4BC30KD G4BC30KD
Part Number IRG4BC30KDPBF IRG4BC30KD G4BC30KD
Type MOSFET MOSFET MOSFET
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
VDSS (V) 550 550 550
RDS(on) (惟) 0.18 (at VGS=10V) 0.18 (at VGS=10V) 0.18 (at VGS=10V)
ID (A) 30 30 30
Ptot (W) 170 170 170
Qg (nC) 140 140 140
Qgd (nC) 38 38 38
fT (MHz) 1.6 1.6 1.6
VGS(th) (V) 2.0 to 4.0 2.0 to 4.0 2.0 to 4.0
Operating Temperature (掳C) -55 to 150 -55 to 150 -55 to 150
Storage Temperature (掳C) -65 to 150 -65 to 150 -65 to 150
Moisture Sensitivity Level (MSL) 3 (168 hours) 3 (168 hours) 3 (168 hours)

Instructions:

  1. Handling Precautions:

    • ESD Protection: These devices are sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and assembly.
    • Moisture Sensitivity: Store the devices in a dry environment and follow the reflow soldering guidelines for moisture-sensitive components.
  2. Mounting and Assembly:

    • Heatsinking: Ensure adequate heatsinking to manage the power dissipation, especially when operating at high currents or in high ambient temperatures.
    • Soldering: Follow the recommended soldering profiles for D2PAK packages to avoid thermal shock and ensure reliable connections.
  3. Electrical Characteristics:

    • VGS Range: Operate within the specified gate-to-source voltage range to prevent damage to the device.
    • RDS(on): The on-state resistance is highly dependent on the gate-to-source voltage. Ensure VGS is sufficient to minimize RDS(on) and reduce power losses.
  4. Thermal Management:

    • Thermal Resistance: The thermal resistance (R胃JC) from junction to case should be considered in the design to ensure the junction temperature does not exceed the maximum rating.
  5. Testing and Validation:

    • Parameter Verification: Verify key parameters such as VDSS, ID, and RDS(on) during testing to ensure the device meets the required specifications.
  6. Application Notes:

    • Circuit Design: Refer to the datasheet and application notes for specific circuit design recommendations, including gate drive circuits and snubber networks for high-frequency applications.

For detailed information, refer to the datasheets provided by the manufacturer.

(For reference only)

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