028N06NS

028N06NS

Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY 028N06NS https://www.utsource.net/itm/p/11712186.html

Parameter Symbol Min Typ Max Unit Description
Input Voltage VIN -0.3 65 V Maximum allowable input voltage
Continuous Current ICONT 28 A Continuous current at 25掳C ambient temperature
Peak Current IPK 56 A Peak current for 100 渭s pulses
RDS(on) RDS(on) 4.5 3.5 5 m惟 On-state resistance at 25掳C, VGS = 10V
Gate Charge QG 11 nC Total gate charge
Reverse Recovery Time trr 70 ns Reverse recovery time
Junction Temperature TJ -55 150 掳C Operating junction temperature range
Storage Temperature TSTG -55 150 掳C Storage temperature range

Instructions for Use:

  1. Input Voltage (VIN):

    • Ensure the input voltage does not exceed 65V to avoid damaging the device.
    • The minimum input voltage is -0.3V to prevent reverse bias issues.
  2. Continuous Current (ICONT):

    • The device can handle a continuous current of up to 28A at an ambient temperature of 25掳C.
    • For higher temperatures, derate the current according to the thermal resistance and heat dissipation capabilities.
  3. Peak Current (IPK):

    • The peak current should not exceed 56A for pulses of 100 渭s duration.
    • Ensure that the pulse width and frequency are within the safe operating area (SOA) of the device.
  4. RDS(on) (On-State Resistance):

    • The on-state resistance is typically 3.5 m惟 at 25掳C with a gate-source voltage (VGS) of 10V.
    • This value can vary between 4.5 m惟 and 5 m惟 depending on temperature and other conditions.
  5. Gate Charge (QG):

    • The total gate charge is 11 nC, which affects the switching speed and drive requirements.
    • Ensure the gate driver can supply the necessary current to charge and discharge the gate quickly.
  6. Reverse Recovery Time (trr):

    • The reverse recovery time is 70 ns, which is important for high-frequency applications.
    • Design the circuit to account for this time to avoid excessive power dissipation during switching.
  7. Junction Temperature (TJ):

    • The operating junction temperature range is from -55掳C to 150掳C.
    • Monitor the junction temperature to ensure it stays within this range to prevent thermal damage.
  8. Storage Temperature (TSTG):

    • Store the device in an environment where the temperature ranges from -55掳C to 150掳C.
    • Avoid exposing the device to extreme temperatures outside this range to prevent degradation.

Additional Notes:

(For reference only)

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