TF20N60: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	V_DS	-	600	-	V
Gate-Source Voltage	V_GS	-20	-	20	V
Continuous Drain Current	I_D	-	20	-	A	T_C = 25掳C
Pulse Drain Current	I_Dpeak	-	40	-	A	t_p = 10 渭s, I_GT = 5 A
Power Dissipation	P_TOT	-	380	-	W	T_C = 25掳C
Junction Temperature	T_J	-	-	175	掳C
Storage Temperature Range	T_STG	-55	-	150	掳C
Thermal Resistance, Junction to Case	R_胃JC	-	0.75	-	掳C/W
Total Gate Charge	Q_G	-	110	-	nC
Input Capacitance	C_iss	-	1900	-	pF	V_DS = 400 V, f = 1 MHz
Output Capacitance	C_oss	-	430	-	pF	V_DS = 400 V, f = 1 MHz
Reverse Transfer Capacitance	C_rss	-	120	-	pF	V_DS = 400 V, f = 1 MHz
Turn-On Delay Time	t_d(on)	-	45	-	ns	V_DS = 400 V, I_D = 10 A, V_GS = 15 V
Rise Time	t_r	-	70	-	ns	V_DS = 400 V, I_D = 10 A, V_GS = 15 V
Turn-Off Delay Time	t_d(off)	-	45	-	ns	V_DS = 400 V, I_D = 10 A, V_GS = 15 V
Fall Time	t_f	-	70	-	ns	V_DS = 400 V, I_D = 10 A, V_GS = 15 V

Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Use thermal paste or a thermal pad to improve thermal conductivity between the device and the heatsink.
Biasing:
- Apply the gate-source voltage (V_GS) carefully to avoid exceeding the maximum ratings.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Operation:
- Operate within the specified drain-source voltage (V_DS) and continuous drain current (I_D) limits.
- For pulse applications, ensure the pulse duration and peak current do not exceed the specified values.
Storage:
- Store the device in a dry, cool place within the storage temperature range to prevent damage.
Handling:
- Handle with care to avoid mechanical stress and static discharge.
- Use appropriate ESD protection when handling the device.
Testing:
- Perform all tests under controlled conditions to ensure accurate results.
- Refer to the datasheet for specific test conditions and procedures.

(For reference only)