FQD13N10L
FQD13N10L

 

FQD13N10L

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Description

BUY FQD13N10L https://www.utsource.net/itm/p/11682637.html

Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDS -10 100 V Maximum drain-to-source voltage
Gate-Source Voltage VGS -20 20 V Maximum gate-to-source voltage
Continuous Drain Current ID 13 A Continuous drain current at 25掳C
Pulse Drain Current ID(pulse) 60 A Pulse drain current (tp = 10 ms, 胃jc = 3掳C/W)
Power Dissipation PD 140 W Maximum power dissipation
Junction Temperature TJ -55 150 掳C Operating junction temperature range
Storage Temperature TSTG -55 150 掳C Storage temperature range
Total Gate Charge QG 38 nC Total gate charge
Input Capacitance Ciss 970 pF Input capacitance at VGS = 0 V, f = 1 MHz
Output Capacitance Coss 300 pF Output capacitance at VDS = 100 V, f = 1 MHz
Reverse Transfer Capacitance Crss 170 pF Reverse transfer capacitance at VDS = 100 V, f = 1 MHz
On-State Resistance RDS(on) 0.085 0.12 惟 On-state resistance at VGS = 10 V, ID = 13 A
Threshold Voltage VGS(th) 1.0 2.0 3.0 V Gate threshold voltage
Leakage Current IDSS 1 渭A Drain-source leakage current at VDS = 100 V, TJ = 25掳C

Instructions for Use:

  1. Voltage Handling:

    • Ensure that the drain-source voltage (VDS) does not exceed 100 V.
    • The gate-source voltage (VGS) should be kept within 卤20 V to avoid damage.

  2. Current Management:

    • The continuous drain current (ID) should not exceed 13 A at 25掳C ambient temperature.
    • For pulse applications, the peak drain current (ID(pulse)) can reach up to 60 A, but ensure the pulse duration is limited to 10 ms and the thermal resistance (胃jc) is 3掳C/W.

  3. Power Dissipation:

    • The maximum power dissipation (PD) is 140 W. Proper heat sinking is essential to manage the temperature.

  4. Temperature Considerations:

    • The operating junction temperature (TJ) should be between -55掳C and 150掳C.
    • Store the device in an environment with a temperature range of -55掳C to 150掳C.

  5. Capacitance and Charge:

    • Be aware of the input (Ciss), output (Coss), and reverse transfer (Crss) capacitances for circuit design.
    • The total gate charge (QG) is 38 nC, which affects switching performance.

  6. On-State and Threshold Characteristics:

    • The on-state resistance (RDS(on)) is 0.085 to 0.12 惟 at VGS = 10 V and ID = 13 A.
    • The gate threshold voltage (VGS(th)) ranges from 1.0 to 3.0 V.

  7. Leakage Current:

    • The drain-source leakage current (IDSS) should not exceed 1 渭A at VDS = 100 V and TJ = 25掳C.

  8. Handling Precautions:

    • Handle the device with care to avoid static discharge, which can damage the sensitive components.
    • Follow proper soldering techniques to ensure reliable connections and prevent thermal stress.

By adhering to these parameters and instructions, you can ensure the optimal performance and longevity of the FQD13N10L MOSFET.

(For reference only)

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