BUY K50EH5 IKW50N65H5 650V 50A IGBT https://www.utsource.net/itm/p/11682263.html
Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | V CES | I C = 0, T J = 25掳C | - | 650 | - | V |
Gate-Emitter Voltage | V GES | I G = 0, T J = 25掳C | -20 | 0 | 20 | V |
Continuous Collector Current | I C | T C = 25掳C | - | 50 | - | A |
Pulse Collector Current | I CM | t p = 10 ms, T C = 25掳C | - | 100 | - | A |
Collector-Emitter Saturation Voltage | V CESAT | I C = 50 A, V GE = 15 V, T J = 25掳C | - | 1.8 | - | V |
Turn-On Time | t ON | I C = 50 A, R G = 10 惟, T J = 25掳C | - | 0.3 | - | 渭s |
Turn-Off Time | t OFF | I C = 50 A, R G = 10 惟, T J = 25掳C | - | 0.4 | - | 渭s |
Total Switching Energy | E SW | I C = 50 A, R G = 10 惟, T J = 25掳C | - | 200 | - | 渭J |
Junction Temperature | T J | - | -55 | - | 175 | 掳C |
Storage Temperature | T STG | - | -55 | - | 150 | 掳C |
Handling and Storage:
Mounting:
Electrical Connections:
Operating Conditions:
Gate Drive:
Protection:
Testing:
By following these guidelines, you can ensure optimal performance and longevity of the K50EH5 IKW50N65H5 IGBT.
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