60M324: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Description	Value	Unit
Part Number	Unique identifier for the component	60M324	-
Type	Type of component	MOSFET	-
Package	Encapsulation type	TO-220	-
V_DS	Drain-to-Source Voltage	60	V
V_GS	Gate-to-Source Voltage	卤20	V
I_D	Continuous Drain Current	32	A
P_TOT	Total Power Dissipation (at T_C = 25掳C)	110	W
R_DS(on)	On-State Resistance (V_GS = 10V)	5.5	m惟
f_T	Transition Frequency	3.5	MHz
Q_G	Gate Charge	95	nC
Q_GD	Gate-Drain Charge	28	nC
V_GS(th)	Gate Threshold Voltage	2.0 to 4.0	V
T_J	Junction Temperature Range	-55 to 175	掳C
T_STG	Storage Temperature Range	-65 to 150	掳C

Handling:
- Handle with care to avoid damage to the leads and body.
- Use appropriate ESD protection to prevent damage from static electricity.
Mounting:
- Ensure proper alignment of the component during mounting.
- Apply thermal paste between the heatsink and the component for better heat dissipation.
- Torque the screws to the recommended values to ensure good thermal contact without damaging the component.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table.
- Ensure that the junction temperature (T_J) remains within the specified range to avoid thermal runaway.
- Use a heatsink if necessary to keep the temperature within safe limits.
Testing:
- Use a multimeter to check for continuity and resistance values.
- Perform functional tests under controlled conditions to verify performance.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep in original packaging until ready for use to protect from moisture and static.
Disposal:
- Follow local regulations for the disposal of electronic components.
- Recycle or dispose of the component responsibly.

(For reference only)