P28N60M2 STP28N60M2
P28N60M2 STP28N60M2

 

P28N60M2 STP28N60M2

Utsource Holding Company Limited flag
Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us
Visit Official Site Contact Us
Description

BUY P28N60M2 STP28N60M2 https://www.utsource.net/itm/p/11665084.html

Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDSS - 600 - V
Gate-Source Voltage VGSS -20 - 15 V
Continuous Drain Current (TC = 25掳C) ID - 28 - A
Continuous Drain Current (TC = 100掳C) ID - 17.5 - A
Pulse Drain Current (TC = 25掳C, tp = 10 ms, Duty Cycle = 1%) ID(p) - 130 - A
Gate Charge QG - 95 - nC
Input Capacitance Ciss - 4400 - pF VGS = 15V, f = 1 MHz
Output Capacitance Coss - 1250 - pF VDS = 400V, f = 1 MHz
Reverse Transfer Capacitance Crss - 650 - pF VDS = 400V, f = 1 MHz
Total Gate Charge QG - 95 - nC VGS = 15V, VDS = 400V, ID = 28A
Turn-On Delay Time tdon - 30 - ns VGS = 15V, ID = 28A, Rg = 3.3惟
Rise Time tr - 35 - ns VGS = 15V, ID = 28A, Rg = 3.3惟
Turn-Off Delay Time tdo - 40 - ns VGS = 15V, ID = 28A, Rg = 3.3惟
Fall Time tf - 50 - ns VGS = 15V, ID = 28A, Rg = 3.3惟
Power Dissipation (TC = 25掳C) PD - 250 - W
Junction to Case Thermal Resistance R胃JC - 0.6 - 掳C/W
Junction to Ambient Thermal Resistance R胃JA - 40 - 掳C/W
Storage Temperature Range Tstg -55 - 150 掳C
Operating Junction Temperature TJ -55 - 150 掳C

Instructions for Use:

  1. Power Supply and Heat Sinking:

    • Ensure that the power supply voltage does not exceed the maximum drain-source voltage (VDSS).
    • Use appropriate heat sinking to keep the junction temperature within the operating range (TJ).

  2. Gate Drive:

    • Apply the gate-source voltage (VGSS) within the specified limits to avoid damage.
    • Use a gate resistor (Rg) to control the switching speed and reduce EMI.

  3. Current Handling:

    • Do not exceed the continuous drain current (ID) ratings at the specified case temperatures.
    • For pulse applications, ensure that the pulse duration and duty cycle do not exceed the specified limits.

  4. Capacitance and Charge:

    • Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) when designing the circuit.
    • The total gate charge (QG) affects the switching losses; ensure that the gate drive circuit can handle this charge efficiently.

  5. Thermal Management:

    • Monitor the thermal resistance (R胃JC and R胃JA) to ensure proper heat dissipation.
    • Use thermal vias and heatsinks to maintain the device within its safe operating area.

  6. Storage and Handling:

    • Store the device in a dry environment and handle with care to prevent electrostatic discharge (ESD) damage.
    • Follow the recommended storage temperature range (Tstg) to avoid degradation.

  7. Testing and Validation:

    • Perform thorough testing under all expected operating conditions to validate the performance and reliability of the device in your application.
(For reference only)

More detail about Utsource Holding Company Limited
Utsource Holding Company Limited
Utsource Holding Company Limited Electronic Component Wholesaler, IC Chip Distributor, IGBT Module Supplier in California, USA | Utsource Holding Company Limited
Contact Us flag