BUY IPP80N06S2-08 2N0608 MOSFET N-CH 55V 80A TO220-3 80A 55V https://www.utsource.net/itm/p/11661506.html
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 55 | - | V |
Gate-Source Voltage | VGS | -15 | - | 15 | V |
Continuous Drain Current (TC = 25掳C) | ID | - | 80 | - | A |
Continuous Drain Current (TC = 100掳C) | ID | - | 50 | - | A |
Pulse Drain Current (TC = 25掳C, tp = 10 ms) | ID(p) | - | 160 | - | A |
Gate Charge | QG | - | 115 | - | nC |
Input Capacitance | Ciss | - | 2700 | - | pF |
Output Capacitance | Coss | - | 400 | - | pF |
Total Power Dissipation (TC = 25掳C) | PTOT | - | 150 | - | W |
Junction to Ambient Thermal Resistance | R胃JA | - | 62 | - | 掳C/W |
Junction to Case Thermal Resistance | R胃JC | - | 1.5 | - | 掳C/W |
Maximum Junction Temperature | TJ | - | - | 150 | 掳C |
Storage Temperature Range | TSTG | -55 | - | 150 | 掳C |
Mounting:
Electrical Connections:
Gate Drive:
Overcurrent Protection:
Thermal Management:
Storage:
ESD Precautions:
Testing: