TD162N14KOF

TD162N14KOF

Category: Available (Qty:9999999)
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Description

BUY TD162N14KOF https://www.utsource.net/itm/p/1918875.html

Parameter Symbol Conditions Min Typ Max Unit
Breakdown Voltage V(BR)DSS - 650 - V
Drain-source On-Resistance RDS(on) VGS = 10V, ID = 2A - 140 -
Gate Threshold Voltage VGS(th) ID = 250μA 1.0 2.0 3.0 V
Continuous Drain Current ID TC = 25°C - 2.0 - A
Total Power Dissipation PD TC = 25°C - 270 - mW
Junction Temperature Tj - 150 - °C
Storage Temperature Range Tstg -55 - 150 °C

Instructions for TD162N14KOF:

  1. Handling Precautions:

    • Use appropriate ESD protection when handling the device to prevent damage.
    • Avoid exposing the device to high temperatures or humidity.
  2. Mounting and Assembly:

    • Ensure that the mounting surfaces are clean and free from contaminants.
    • Follow recommended soldering profiles to avoid thermal stress on the device.
  3. Operating Conditions:

    • Operate within specified voltage and current limits to ensure reliable performance.
    • Maintain junction temperature within the specified range to prevent overheating.
  4. Storage:

    • Store in a dry, cool environment within the specified storage temperature range.
    • Handle with care to prevent mechanical damage.
  5. Electrical Connections:

    • Verify correct polarity connections to avoid reverse bias conditions that can damage the device.
    • Ensure gate drive signals do not exceed the maximum gate-source voltage ratings.
  6. Testing:

    • Perform initial testing under controlled conditions to validate proper operation.
    • Regularly inspect for signs of wear or damage during prolonged use.
(For reference only)

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