Description
BUY TD162N14KOF https://www.utsource.net/itm/p/1918875.html
Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
Breakdown Voltage |
V(BR)DSS |
|
- |
650 |
- |
V |
Drain-source On-Resistance |
RDS(on) |
VGS = 10V, ID = 2A |
- |
140 |
- |
mΩ |
Gate Threshold Voltage |
VGS(th) |
ID = 250μA |
1.0 |
2.0 |
3.0 |
V |
Continuous Drain Current |
ID |
TC = 25°C |
- |
2.0 |
- |
A |
Total Power Dissipation |
PD |
TC = 25°C |
- |
270 |
- |
mW |
Junction Temperature |
Tj |
|
- |
150 |
- |
°C |
Storage Temperature Range |
Tstg |
|
-55 |
- |
150 |
°C |
Instructions for TD162N14KOF:
Handling Precautions:
- Use appropriate ESD protection when handling the device to prevent damage.
- Avoid exposing the device to high temperatures or humidity.
Mounting and Assembly:
- Ensure that the mounting surfaces are clean and free from contaminants.
- Follow recommended soldering profiles to avoid thermal stress on the device.
Operating Conditions:
- Operate within specified voltage and current limits to ensure reliable performance.
- Maintain junction temperature within the specified range to prevent overheating.
Storage:
- Store in a dry, cool environment within the specified storage temperature range.
- Handle with care to prevent mechanical damage.
Electrical Connections:
- Verify correct polarity connections to avoid reverse bias conditions that can damage the device.
- Ensure gate drive signals do not exceed the maximum gate-source voltage ratings.
Testing:
- Perform initial testing under controlled conditions to validate proper operation.
- Regularly inspect for signs of wear or damage during prolonged use.
(For reference only)
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