MG50G2CH1

MG50G2CH1

Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY MG50G2CH1 https://www.utsource.net/itm/p/2148297.html

Parameter Description Value Unit
Part Number Full part number MG50G2CH1
Type Component type MOSFET
Package Package type TO-220
Drain Source Voltage Maximum drain-source voltage 50 V
Continuous Drain Current Continuous drain current at 25°C 2 A
Pulse Drain Current Peak pulse drain current 8 A
Gate Source Voltage Maximum gate-source voltage ±20 V
Power Dissipation Maximum power dissipation 62.5 W
Junction Temperature Maximum junction temperature 150 °C
Storage Temperature Operating temperature range -55 to +150 °C

Instructions for Use:

  1. Handling Precautions:

    • Handle with care to avoid damage to the leads and body.
    • Use appropriate ESD protection when handling to prevent damage from static electricity.
  2. Mounting:

    • Ensure correct orientation before soldering.
    • Do not exceed recommended torque values when securing screws in heatsink applications.
  3. Soldering:

    • Solder within the recommended temperature and time limits to avoid thermal damage.
    • Allow adequate cooling post-soldering.
  4. Electrical Connections:

    • Verify all electrical connections are secure and meet specifications.
    • Ensure gate drive circuitry is properly designed to minimize switching losses.
  5. Thermal Management:

    • Ensure adequate heat sinking if operating near maximum power dissipation.
    • Monitor device temperature to ensure it stays within operational limits.
  6. Storage:

    • Store in a dry, cool environment away from direct sunlight.
    • Keep in original packaging until ready for use to protect against ESD.
(For reference only)

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