Description
BUY S29AL032D90TFI04 https://www.utsource.net/itm/p/5077864.html
| Parameter |
Description |
Value |
| Device Type |
Serial Flash Memory |
S29AL032D90TFI04 |
| Memory Density |
32 Mbit |
|
| Voltage - Supply (Vcc) |
Operating voltage |
2.7 V to 3.6 V |
| Clock Frequency |
Maximum clock frequency |
50 MHz |
| Interface |
Serial Peripheral Interface (SPI) |
|
| Package / Case |
8-TSSOP |
|
| Operating Temperature |
Minimum operating temperature to maximum operating temperature |
-40°C to +85°C |
| Data Retention |
Data retention time |
10 years |
| Write Cycle Time |
Time required for a write cycle |
5 ms |
| Erase Cycle Time |
Time required for an erase cycle |
200 ms |
| Endurance |
Number of program/erase cycles |
100,000 |
Instructions
Power Supply Requirements:
- Ensure the supply voltage (Vcc) is within the specified range of 2.7 V to 3.6 V.
Clock Configuration:
- Set up the SPI clock to operate at a frequency not exceeding 50 MHz for reliable operation.
Initialization:
- Before performing any read/write operations, ensure the device is properly initialized according to the SPI protocol.
Write Operations:
- Perform a write enable command before initiating any write or erase operations.
- Wait for the write cycle to complete (5 ms).
Erase Operations:
- Execute a sector/block/chip erase command as needed.
- Allow sufficient time for the erase cycle to complete (200 ms).
Temperature Considerations:
- Operate the device within the temperature range of -40°C to +85°C to avoid damage and ensure data integrity.
Data Integrity:
- For optimal data retention, do not exceed 100,000 program/erase cycles.
Handling Precautions:
- Handle with care to prevent electrostatic discharge (ESD) damage, especially during soldering or handling outside ESD-protected areas.
(For reference only)
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