FP10R06KL4_B3

FP10R06KL4_B3

Category: Available (Qty:9999999)
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Description

BUY FP10R06KL4_B3 https://www.utsource.net/itm/p/8809461.html

Parameter Description Value Unit
Part Number Full part number FP10R06KL4_B3 -
Type Device type MOSFET -
Technology Process technology Trench -
Package Package type TO-220FP -
VDS (Max) Drain-source voltage 600 V
RDS(on) (Max) On-state resistance 0.058
ID (Max) Continuous drain current 10 A
PD (Max) Power dissipation 75 W
TJ (Max) Junction temperature 175 掳C
Qg (Total) Total gate charge 29 nC
VGS(th) (Min) Gate threshold voltage 2.0 V
VGS(th) (Typ) Gate threshold voltage 2.8 V
VGS(th) (Max) Gate threshold voltage 4.0 V
EAS (Max) Avalanche energy 1.1 J

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection equipment.
  2. Mounting:

    • Ensure that the mounting surface is clean and flat. Apply thermal paste if necessary for better heat dissipation.
  3. Soldering:

    • Solder within the recommended temperature range and time to prevent damage to the device. Maximum soldering temperature: 260掳C for 10 seconds.
  4. Storage:

    • Store in a dry environment away from direct sunlight and sources of heat.
  5. Operating Conditions:

    • Operate within specified electrical and thermal limits to ensure reliable performance and longevity.
  6. Testing:

    • Before installing, verify the device parameters using appropriate testing equipment to ensure it meets the specifications.
  7. Applications:

    • Suitable for use in power supplies, motor control, and general-purpose switching applications where high efficiency and reliability are required.
(For reference only)

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