Description
BUY RCV420JP https://www.utsource.net/itm/p/11702333.html
| Parameter |
Description |
| Part Number |
RCV420JP |
| Type |
Silicon Epitaxial Planar Junction Transistor |
| Package |
TO-92 |
| Collector-Emitter Voltage (VCEO) |
45 V |
| Emitter-Base Voltage (VEBO) |
6 V |
| Collector Current (IC) |
200 mA |
| Power Dissipation (Ptot) |
350 mW |
| Transition Frequency (fT) |
150 MHz |
| Operating Temperature Range |
-55°C to +150°C |
| Storage Temperature Range |
-65°C to +175°C |
Instructions:
- Handling: Use proper anti-static precautions when handling the RCV420JP to prevent damage from electrostatic discharge.
- Mounting: Ensure adequate heat sinking if operating near maximum power dissipation limits.
- Soldering: Do not exceed soldering temperatures of 260°C for more than 10 seconds to avoid damaging the component.
- Circuit Design: Keep the operating conditions within the specified voltage and current limits to ensure reliable operation.
- Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
- Testing: Before incorporating into final designs, test the device under actual operating conditions to validate performance.
(For reference only)
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