SKM200GB125D: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CES			1250	V
Emitter-Collector Voltage	V ECS			-5	V
Gate-Emitter Voltage	V GES	-20		20	V
Continuous Collector Current	I C		200		A	Tc = 25°C
Pulse Collector Current	I CM		300		A	tp = 10ms, I FM = 2 × I C
Power Dissipation	Ptot			150	W	Tc = 25°C
Junction Temperature	T J			150	°C
Storage Temperature	T stg	-40		150	°C

Mounting and Handling:
- Ensure the device is mounted on a suitable heat sink to maintain junction temperature within specified limits.
- Handle with care to avoid mechanical damage.
Electrical Connections:
- Connect the collector (C), emitter (E), and gate (G) terminals accurately according to your circuit diagram.
- Use short and thick wires for connections to minimize inductance and resistance.
Gate Drive:
- Apply gate voltage within the specified range (-20V to +20V).
- Ensure gate drive circuits are designed to provide sufficient current for fast switching.
Overcurrent Protection:
- Implement overcurrent protection mechanisms to prevent damage from excessive currents exceeding 200A continuous or 300A pulse.
Thermal Management:
- Monitor the junction temperature to ensure it does not exceed 150°C.
- Proper thermal management is crucial for reliable operation and longevity of the device.
Storage and Operating Environment:
- Store the device in a controlled environment between -40°C and 150°C.
- Avoid exposure to moisture and corrosive environments.
Pulse Operation:
- For pulse applications, ensure that the pulse duration (tp) does not exceed 10ms and the frequency is such that the average power dissipation remains within limits.
Safety Precautions:
- Always use appropriate safety measures when handling high voltage and current components.
- Follow all relevant electrical safety standards and guidelines.

(For reference only)