4151CP

4151CP

Category: Available (Qty:9999999)
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Description

BUY 4151CP https://www.utsource.net/itm/p/12591064.html

Parameter Description Value Unit
Part Number Component Identifier 4151CP -
Type Device Type Bipolar Transistor -
Collector-Emitter Voltage (VCEO) Maximum voltage between collector and emitter 80 V
Collector-Base Voltage (VCBO) Maximum voltage between collector and base 80 V
Emitter-Base Voltage (VEBO) Maximum voltage between emitter and base 5 V
Continuous Collector Current (IC) Maximum continuous collector current 1.5 A
Power Dissipation (PD) Maximum power dissipation 65 W
Transition Frequency (fT) Frequency at which gain is unity 300 MHz
Storage Temperature Range (TSTG) Operating temperature range for storage -55 to +150 °C
Junction Temperature (TJ) Maximum operating junction temperature 150 °C

Instructions for Use:

  1. Handling: The 4151CP is sensitive to electrostatic discharge (ESD). Use proper ESD precautions when handling.
  2. Mounting: Ensure adequate heat sinking if operating near maximum power dissipation limits.
  3. Biasing: Carefully set biasing conditions to avoid exceeding the maximum ratings, especially for VCEO, VCBO, and VEBO.
  4. Operation: Operate within specified temperature ranges to ensure reliability and performance.
  5. Testing: During testing, do not exceed the maximum ratings specified in the table to prevent damage to the device.
(For reference only)

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