Description
BUY 2SB718 https://www.utsource.net/itm/p/12606175.html
| Parameter |
Symbol |
Value |
Unit |
| Collector-Emitter Voltage |
V(BR)CEO |
60 |
V |
| Collector-Base Voltage |
V(BR)CBO |
75 |
V |
| Emitter-Base Voltage |
V(BR)EBO |
5 |
V |
| Collector Current |
IC |
1.5 |
A |
| Base Current |
IB |
0.15 |
A |
| Power Dissipation |
PD |
125 |
mW |
| Forward Current Transfer Ratio (hFE) |
- |
300 to 800 |
- |
| Junction Temperature |
TJ |
-55 to 150 |
°C |
Instructions for Use:
- Mounting: Ensure the transistor is mounted in a way that allows adequate heat dissipation if operating near its maximum power dissipation.
- Biasing: Apply bias voltages carefully to avoid exceeding the maximum ratings for V(BR)CEO, V(BR)CBO, and V(BR)EBO.
- Current Handling: Do not exceed the specified collector current (IC) and base current (IB) limits to prevent damage.
- Temperature Consideration: Operate within the specified junction temperature range to ensure reliable performance.
- Storage: Store in a dry place away from direct sunlight and sources of heat when not in use.
(For reference only)
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