TGPF30N40P: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	0.24	-	Ω	VGS = 10V, ID = 10A
Gate-Source Threshold Voltage	VGS(th)	2.0	-	4.0	V	ID = 250μA
Continuous Drain Current	ID	-	-	30	A	TC = 25°C
Pulse Drain Current	IGM	-	-	90	A	tp = 10ms, TC = 25°C
Power Dissipation	PD	-	-	170	W	TC = 25°C
Junction Temperature	TJ	-	-	175	°C	-
Storage Temperature	TSTG	-55	-	150	°C	-

Installation:
- Ensure the device is handled with care to avoid damage from electrostatic discharge (ESD).
- Use appropriate heat sinks or cooling solutions if operating near maximum power dissipation.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Maintain the junction temperature within specified limits to ensure reliable operation.
Gate Drive:
- Apply a gate-source voltage (VGS) of at least 10V to fully turn on the device and minimize on-state resistance.
- Avoid applying voltages outside the threshold range to prevent unintended operation.
Handling Pulses:
- For pulse operations, ensure the pulse duration does not exceed the specified limits to prevent thermal overload.
Storage:
- Store the device in a dry, cool environment within the storage temperature range to prevent degradation.
Safety Precautions:
- Always follow safe handling practices and consult the datasheet for detailed specifications and safety guidelines.

(For reference only)